A STRIPE-GEOMETRY INGAASP/INP HETEROJUNCTION BIPOLAR-TRANSISTOR SUITABLE FOR OPTICAL INTEGRATION

被引：7

作者：

CHEN, TR

ZHUANG, YH

CHANG, B

YI, MB

YARIV, A

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1987年 / 8卷 / 05期

关键词：

D O I：

10.1109/EDL.1987.26599

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：191 / 193

页数：3

共 9 条

[1]

CHOUDHURY ANMM, 1984, IEEE ELECTR DEVICE L, V5, P251, DOI 10.1109/EDL.1984.25907

[2] MONOLITHIC INTEGRATION OF INGAASP/INP LED AND TRANSISTOR - A LIGHT-COUPLED BISTABLE ELECTRO-OPTICAL DEVICE [J].

GROTHE, H ;

PROEBSTER, W .

ELECTRONICS LETTERS, 1983, 19 (06) :194-196

[3]

KANBE H, 1984, IEEE ELECTR DEVICE L, V5, P172, DOI 10.1109/EDL.1984.25873

[4] A MONOLITHIC INTEGRATION OF GAAS-GAAIAS BIPOLAR-TRANSISTOR AND HETEROSTRUCTURE LASER [J].

KATZ, J ;

BARCHAIM, N ;

CHEN, PC ;

MARGALIT, S ;

URY, I ;

WILT, D ;

YUST, M ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1980, 37 (02) :211-213

[5] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J].

KROEMER, H .

PROCEEDINGS OF THE IEEE, 1982, 70 (01) :13-25

[6] HIGH-GAIN AL0.48IN0.52AS/GA0.53AS VERTICAL N-P-N HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY MOLECULAR-BEAM EPITAXY [J].

MALIK, RJ ;

HAYES, JR ;

CAPASSO, F ;

ALAVI, K ;

CHO, AY .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (10) :383-385

[7] HIGH-CURRENT INGAASP-INP PHOTOTRANSISTORS AND SOME MONOLITHIC OPTICAL-DEVICES [J].

SASAKI, A ;

MATSUDA, K ;

KIMURA, Y ;

FUJITA, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (09) :1382-1388

[8] MONOLITHIC INTEGRATION OF AN INGAASP/INP LASER DIODE WITH HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

SHIBATA, J ;

NAKAO, I ;

SASAI, Y ;

KIMURA, S ;

HASE, N ;

SERIZAWA, H .

APPLIED PHYSICS LETTERS, 1984, 45 (03) :191-193

[9] NPNN DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTOR ON INGAASP/INP [J].

SU, LM ;

GROTE, N ;

KAUMANNS, R ;

SCHROETER, H .

APPLIED PHYSICS LETTERS, 1985, 47 (01) :28-30

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