OXIDE BREAKDOWN DUE TO CHARGE ACCUMULATION DURING PLASMA-ETCHING

被引:24
作者
RYDEN, KH [1 ]
NORSTROM, H [1 ]
NENDER, C [1 ]
BERG, S [1 ]
机构
[1] UNIV UPPSALA,INST TECHNOL,S-75121 UPPSALA,SWEDEN
关键词
D O I
10.1149/1.2100351
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:3113 / 3118
页数:6
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