MONTE-CARLO SIMULATION OF SPUTTERING AND SATURATION PHENOMENA FOR LOW-ENERGY NOBLE-GAS IONS

被引：37

作者：

SIELANKO, J

SZYSZKO, W

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1986年 / 16卷 / 4-5期

关键词：

D O I：

10.1016/0168-583X(86)90093-5

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：340 / 344

页数：5

共 28 条

[1] HEAVY-ION SPUTTERING YIELD OF SILICON [J].

ANDERSEN, HH ;

BAY, HL .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) :1919-1921

[2]

ANDERSEN HH, 1973, ION SURFACE INTERACT, P63

[3] DISTRIBUTION OF NITROGEN IMPLANTED IN IRON AS A FUNCTION OF FLUENCE [J].

BARNAVON, T ;

TOUSSET, J ;

FAYEULLE, S ;

GUIRALDENQ, P ;

TREHEUX, D ;

ROBELET, M .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1983, 77 (3-4) :249-268

[4] DEPENDENCE OF RESIDUAL DAMAGE ON TEMPERATURE DURING AR+ SPUTTER CLEANING OF SILICON [J].

BEAN, JC ;

BECKER, GE ;

PETROFF, PM ;

SEIDEL, TE .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) :907-913

[5]

BETO G, 1971, INT J MASS SPECTROM, V6, P451

[6] INFLUENCE OF SPUTTERING, RANGE SHORTENING AND STRESS-INDUCED OUT-DIFFUSION ON RETENTION OF XENON IMPLANTED IN SILICON [J].

BLANK, P ;

WITTMAACK, K ;

SCHULZ, F .

NUCLEAR INSTRUMENTS & METHODS, 1976, 132 (JAN-F) :387-392

[7] ENERGY AND FLUENCE DEPENDENCE OF THE SPUTTERING YIELD OF SILICON BOMBARDED WITH ARGON AND XENON [J].

BLANK, P ;

WITTMAACK, K .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (03) :1519-1528

[8] AN ANALYTICAL FORMULA AND IMPORTANT PARAMETERS FOR LOW-ENERGY ION SPUTTERING [J].

BOHDANSKY, J ;

ROTH, J ;

BAY, HL .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) :2861-2865

[9] MONTE-CARLO STUDIES OF SPUTTERING [J].

HAGGMARK, LG ;

WILSON, WD .

JOURNAL OF NUCLEAR MATERIALS, 1978, 76-7 (1-2) :149-155

[10]

ISHITANI T, 1975, APPL PHYS, V6, P241, DOI 10.1007/BF00883758

← 1 2 3 →