OXIDATION OF SILICON AT HIGH TEMPERATURES AND LOW PRESSURE UNDER FLOW CONDITIONS AND VAPOR PRESSURE OF SILICON

被引：54

作者：

GULBRANSEN, EA

ANDREW, KF

BRASSART, FA

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1966年 / 113卷 / 08期

关键词：

D O I：

10.1149/1.2424130

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：834 / +

页数：1

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