CHARGE STATE DEPENDENCE OF K-X-RAY PRODUCTION IN THIN TARGETS BY MULTICHARGED SILICON IONS

被引：4

作者：

MCDANIEL, FD

DUGGAN, JL

LAPICKI, G

MILLER, PD

机构：

[1] UNIV N TEXAS,CTR MAT CHARACTERIZAT,DENTON,TX 76203

[2] E CAROLINA UNIV,DEPT PHYS,GREENVILLE,NC 27858

[3] OAK RIDGE NATL LAB,DIV PHYS,OAK RIDGE,TN 37830

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1989年 / 42卷 / 04期

关键词：

D O I：

10.1016/0168-583X(89)90106-7

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：485 / 490

页数：6

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