CHARGE STATE DEPENDENCE OF K-X-RAY PRODUCTION IN THIN TARGETS BY MULTICHARGED SILICON IONS

被引：4
作者：
MCDANIEL, FD
DUGGAN, JL
LAPICKI, G
MILLER, PD
机构：
[1] UNIV N TEXAS,CTR MAT CHARACTERIZAT,DENTON,TX 76203
[2] E CAROLINA UNIV,DEPT PHYS,GREENVILLE,NC 27858
[3] OAK RIDGE NATL LAB,DIV PHYS,OAK RIDGE,TN 37830
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1989年 / 42卷 / 04期
关键词：
D O I：
10.1016/0168-583X(89)90106-7
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
引用
收藏
页码：485 / 490
页数：6
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