DEVELOPMENT OF A MANY-BODY TERSOFF-TYPE POTENTIAL FOR SILICON

被引:173
作者
DODSON, BW
机构
来源
PHYSICAL REVIEW B | 1987年 / 35卷 / 06期
关键词
D O I
10.1103/PhysRevB.35.2795
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
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页码:2795 / 2798
页数:4
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共 20 条
[1]  
ABELL GC, 1984, PHYS REV B, V31, P6184
[2]   Interaction of the van der Waals type between three atoms [J].
Axilrod, BM ;
Teller, E .
JOURNAL OF CHEMICAL PHYSICS, 1943, 11 (06) :299-300
[3]  
BINDER K, 1984, APPLICATIONS MONTE C
[4]   INTERATOMIC POTENTIALS FOR SILICON STRUCTURAL ENERGIES [J].
BISWAS, R ;
HAMANN, DR .
PHYSICAL REVIEW LETTERS, 1985, 55 (19) :2001-2004
[5]   ATOMISTIC MONTE-CARLO CALCULATION OF CRITICAL LAYER THICKNESS FOR COHERENTLY STRAINED SILICON-LIKE STRUCTURES [J].
DODSON, BW ;
TAYLOR, PA .
APPLIED PHYSICS LETTERS, 1986, 49 (11) :642-644
[6]   UNIVERSAL SCALING RELATIONS IN COMPRESSIBILITY OF SOLIDS [J].
DODSON, BW .
PHYSICAL REVIEW B, 1987, 35 (06) :2619-2625
[7]   EVALUATION OF THE STILLINGER-WEBER CLASSICAL INTERACTION POTENTIAL FOR TETRAGONAL SEMICONDUCTORS IN NONIDEAL ATOMIC CONFIGURATIONS [J].
DODSON, BW .
PHYSICAL REVIEW B, 1986, 33 (10) :7361-7363
[8]  
Harrison W. A., 1980, ELECTRONIC STRUCTURE
[9]   OPTIMIZATION BY SIMULATED ANNEALING [J].
KIRKPATRICK, S ;
GELATT, CD ;
VECCHI, MP .
SCIENCE, 1983, 220 (4598) :671-680
[10]   FACETING AT THE SILICON (100) CRYSTAL-MELT INTERFACE - THEORY AND EXPERIMENT [J].
LANDMAN, U ;
LUEDTKE, WD ;
BARNETT, RN ;
CLEVELAND, CL ;
RIBARSKY, MW ;
ARNOLD, E ;
RAMESH, S ;
BAUMGART, H ;
MARTINEZ, A ;
KHAN, B .
PHYSICAL REVIEW LETTERS, 1986, 56 (02) :155-158