A strained Si-channel NMOSFET with low field mobility enhancement of about 140% using a SiGe virtual substrate

被引：1

作者：

Cui Wei ^{[1
,2
]}

Tang Zhaohuan ^{[2
]}

Tan Kaizhou ^{[2
]}

Zhang Jing ^{[2
]}

Zhong Yi ^{[2
]}

Hu Huiyong ^{[3
]}

Xu Shiliu ^{[2
]}

Li Ping ^{[1
]}

Hu Gangyi ^{[2
]}

机构：

[1] UESTC, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610023, Sichuan, Peoples R China

[2] Sci & Technol Analog Integrated Circuit Lab, Chongqing 400060, Peoples R China

[3] Xidian Univ, Minist Educ Wide Band Gap Semicond Mat & Devices, Microelect Sch, Key Lab, Xian 710071, Shaanxi, Peoples R China

来源：

JOURNAL OF SEMICONDUCTORS | 2012年 / 33卷 / 09期

关键词：

CMOS inverter; strained Si; mobility enhancement; SiGe virtual substrate; relaxed layer;

D O I：

10.1088/1674-4926/33/9/094005

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A fully standard CMOS integrated strained Si-channel NMOSFET has been demonstrated. By adjusting the thickness of graded SiGe, modifying the channel doping concentration, changing the Ge fraction of the relaxed SiGe layer and forming a p-well by multiple implantation technology, a surface strained Si-channel NMOSFET was fabricated, of which the low field mobility was enhanced by 140%, compared with the bulk-Si control device. Strained NMOSFET and PMOSFET were used to fabricate a strained CMOS inverter based on a SiGe virtual substrate. Test results indicated that the strained CMOS converter had a drain leakage current much lower than the Si devices, and the device exhibited wonderful on/off-state voltage transmission characteristics.

引用

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