LOW-THRESHOLD DISORDER-DEFINED BURIED-HETEROSTRUCTURE ALGAAS DIODE-LASERS BY ANISOTROPIC DIFFUSION OF LASER-INCORPORATED SI

被引：11

作者：

EPLER, JE

BURNHAM, RD

THORNTON, RL

PAOLI, TL

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 10期

关键词：

D O I：

10.1063/1.98849

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：731 / 733

页数：3

共 9 条

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[2] LOW-THRESHOLD DISORDER-DEFINED BURIED-HETEROSTRUCTURE ALXGA1-XAS-GAAS QUANTUM WELL LASERS [J].

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[3]

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[4] LASER-INDUCED DISORDERING OF GAAS-ALGAAS SUPERLATTICE AND INCORPORATION OF SI IMPURITY [J].

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PAOLI, TL ;

BASHAW, MC .

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[5] LOW THRESHOLD BURIED HETEROSTRUCTURE QUANTUM-WELL DIODE-LASERS BY LASER-ASSISTED DISORDERING [J].

EPLER, JE ;

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THORNTON, RL ;

PAOLI, TL .

APPLIED PHYSICS LETTERS, 1987, 50 (23) :1637-1639

[6]

HOLONYAK N, 1983, Patent No. 4378155

[7]

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[8] UNIVERSAL STAIN-ETCHANT FOR INTERFACES IN III-V COMPOUNDS [J].

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[9] SILICON DIFFUSION INTO ALXGA1-XAS(X=0-0.4) FROM A SPUTTERED SILICON FILM [J].

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MERZ, JL .

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