IMPACT IONIZATION INVESTIGATIONS ON ZNSE SCHOTTKY-BARRIER DIODES

被引：16

作者：

MACH, R ^{[1
]}

LUDWIG, W ^{[1
]}

机构：

[1] DAWB,ZENT INST ELEKTR PHYS,BERLIN,EAST GERMANY

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1974年 / 23卷 / 02期

关键词：

D O I：

10.1002/pssa.2210230221

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：507 / 516

页数：10

共 17 条

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CROWELL, CR .

PHYSICAL REVIEW B, 1972, 5 (06) :2267-&

[3] IMPACT IONIZATION THRESHOLDS IN SEMICONDUCTORS [J].

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MAJOR, KG ;

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[4] The analysis of photoelectric sensitivity curves for clean metals at various temperatures [J].

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[5]

GARTNER WW, 1954, PHYS REV, V116, P84

[6]

HARTMANN H, 1974, KRISTALL TECHNIK, V7, P743

[7]

HOWARD NR, 1962, J ELECTRON CONTR, V13, P537

[8] ELECTRON SCATTERING BY PAIR PRODUCTION IN SILICON [J].

KANE, EO .

PHYSICAL REVIEW, 1967, 159 (03) :624-&

[9] REFRACTIVE INDEX OF ZNSE, ZNTE, + CDTE [J].

MARPLE, DTF .

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[10] AVALANCHE BREAKDOWN IN SILICON [J].

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