DAMAGE CENTER FORMATION IN SIO2 THIN-FILMS BY FAST ELECTRON-IRRADIATION

被引：66
作者：
PFEFFER, RL
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 12期
关键词：
D O I：
10.1063/1.335252
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：5176 / 5180
页数：5
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