HIGH-SPEED LOW-LOSS P-N DIODE HAVING A CHANNEL STRUCTURE

被引：22

作者：

SHIMIZU, Y

NAITO, M

MURAKAMI, S

TERASAWA, Y

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1984年 / 31卷 / 09期

关键词：

D O I：

10.1109/T-ED.1984.21705

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：1314 / 1319

页数：6

相关论文

共 6 条

[1] Assalit H. B., 1979, Industry Application Society IEEE-IAS Annual Meeting, P1056
[2] HIGH-CURRENT CHARACTERISTICS OF ASYMMETRICAL PIN DIODES HAVING LOW FORWARD VOLTAGE DROPS
NAITO, M
MATSUZAKI, H
OGAWA, T
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (08) : 945 - 949
[3] FIELD-EFFECT TRANSISTOR VERSUS ANALOG TRANSISTOR (STATIC INDUCTION TRANSISTOR)
NISHIZAWA, JI
TERASAKI, T
SHIBATA, J
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (04) : 185 - 197
[4] PUNCHING THROUGH DEVICE AND ITS INTEGRATION - STATIC INDUCTION TRANSISTOR
OHMI, T
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (03) : 536 - 545
[5] TOYABE T, 1979, P NASECODE, V1
[6] SCHOTTKY DIODES WITH HIGH BREAKDOWN VOLTAGES
WILAMOWSKI, BM
[J]. SOLID-STATE ELECTRONICS, 1983, 26 (05) : 491 - 493