NONUNIFORM ELECTRIC-FIELD EFFECT ON PHONON-ASSISTED TUNNELING IN SEMICONDUCTORS

被引:1
作者
YANG, E [1 ]
机构
[1] HYDROCARBON TRANSPORTATION INC,2223 DODGE ST,OMAHA,NB 68102
关键词
D O I
10.1016/0022-3697(75)90200-0
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
引用
收藏
页码:1255 / 1259
页数:5
相关论文
共 9 条
[1]   ELECTRIC-FIELD EFFECTS ON OPTICAL ABSORPTION NEAR THRESHOLDS IN SOLIDS [J].
ASPNES, DE .
PHYSICAL REVIEW, 1966, 147 (02) :554-&
[2]   ONE-ELECTRON AND PHONON-ASSISTED TUNNELING IN N-GE SCHOTTKY BARRIERS [J].
DAVIS, LC ;
STEINRIS.F .
PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (02) :614-+
[3]   THEORY OF TUNNELING [J].
KANE, EO .
JOURNAL OF APPLIED PHYSICS, 1961, 32 (01) :83-+
[4]   ZENER TUNNELING IN SEMICONDUCTORS [J].
KANE, EO .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 12 (02) :181-188
[5]  
KELDYSH LV, 1958, SOV PHYS JETP-USSR, V6, P763
[6]  
KELDYSH LV, 1958, SOV PHYS JETP-USSR, V7, P665
[7]   THEORY OF PHONON-ASSISTED TUNNELING IN SEMICONDUCTORS [J].
KLEINMAN, L .
PHYSICAL REVIEW, 1965, 140 (2A) :A637-&
[8]  
YANG E, 1974, J PHYS CHEM SOLIDS, V35, P455, DOI 10.1016/S0022-3697(74)80039-9
[9]   ELECTROREFLECTANCE IN A NONUNIFORM FIELD IN SMALL-WAVE-NUMBER APPROXIMATION AND ITS MEASUREMENT BY ELLIPSOMETRY [J].
YANG, E ;
BUCKMAN, AB .
PHYSICAL REVIEW B, 1972, 5 (06) :2242-&