BAND STRUCTURE OF GRAY TIN

被引:276
作者
GROVES, S
PAUL, W
机构
关键词
D O I
10.1103/PhysRevLett.11.194
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:194 / &
相关论文
共 9 条
[1]   EFFECT OF ALLOYING AND PRESSURE ON BAND STRUCTURE OF GERMANIUM AND SILICON [J].
BASSANI, F ;
BRUST, D .
PHYSICAL REVIEW, 1963, 131 (04) :1524-&
[2]   SEMICONDUCTING PROPERTIES OF GRAY TIN [J].
BUSCH, GA ;
KERN, R .
SOLID STATE PHYSICS-ADVANCES IN RESEARCH AND APPLICATIONS, 1960, 11 :1-40
[3]  
GROVES S, 1962, B AM PHYS SOC, V7, P184
[4]  
Herman F., 1955, J ELECT CONTROL, V1, P103
[5]  
HINKLEY ED, 1963, B AM PHYS SOC, V8, P245
[6]  
LIU L, 1963, B AM PHYS SOC, V8, P51
[7]  
PAUL W, 1961, J APPL PHYS S, V32, pS208
[8]  
PAUL W, 1961, 1960 P INT C SEM PHY, P56
[9]   MAGNETORESISTANCE OF ORIENTED GRAY TIN SINGLE CRYSTALS [J].
TUFTE, ON ;
EWALD, AW .
PHYSICAL REVIEW, 1961, 122 (05) :1431-&