RF interference effects on PIN photodiodes

被引：10

作者：

Liu, CK

Chou, CY

机构：

来源：

IEEE TRANSACTIONS ON ELECTROMAGNETIC COMPATIBILITY | 1995年 / 37卷 / 04期

关键词：

D O I：

10.1109/15.477345

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

RFI effects on PIN diodes were studied experimentally for various light powers. It is shown here that operating a diode in a photovoltaic mode is much more susceptible to RFI than operating it in a photoconductive mode. The RF-frequency and RF-power dependences of the interference effect are illustrated. A method of predicting combined effects of Light illumination and RFI is suggested. Methods of avoiding this interference are discussed.

引用

页码：589 / 592

页数：4

共 7 条

[1]

GOEDBLOED J, 1992, ELECTROMAGNETIC COMP, P235

[2] MODIFIED EBERS-MOLL TRANSISTOR MODEL FOR RF-INTERFERENCE ANALYSIS [J].