EVIDENCE FOR QUANTUM CONFINEMENT IN POROUS SILICON FROM PHOTOLUMINESCENCE MEASUREMENTS

被引：9
作者：
JOSHKIN, VA
NAIDENKOV, MN
PAVLENKO, VN
KVIT, AV
OKTYABRSKY, SR
机构：
[1] PN LEBEDEV PHYS INST, MOSCOW 117924, RUSSIA
[2] N CAROLINA STATE UNIV, DEPT MAT SCI & ENGN, RALEIGH, NC 27695 USA
来源：
PHYSICAL REVIEW B | 1995年 / 52卷 / 16期
关键词：
D O I：
10.1103/PhysRevB.52.12102
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have investigated the correlation of photoluminescence (PL) properties with certain etching conditions, thermal annealing, and powdering of porous silicon. A blueshift of the PL main peak bas observed with a decrease of the PL intensity. PL quenching in p-Si corresponds to a relaxation or desorption process with the activation energy of 0.37 +/- 0.13 eV. The decrease of the PL efficiency and the shift of the PL main peak to the blue region were investigated as a function of excitation intensity. On the basis of our results we verified some physical models of porous silicon FL. It is shown that the features of porous silicon PL are associated with a quantum confinement effect in silicon nanocrystallites. A model for competing nonradiative and radiative recombination channels is proposed to explain the observed phenomena.
引用
收藏
页码：12102 / 12107
页数：6
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