CRYSTAL-GROWTH OF III-N COMPOUNDS UNDER HIGH-NITROGEN PRESSURE

被引：45

作者：

GRZEGORY, I

JUN, J

KRUKOWSKI, S

BOCKOWSKI, M

POROWSKI, S

机构：

[1] High Pressure Research Center, Polish Academy of Sciences, Warsaw

来源：

PHYSICA B | 1993年 / 185卷 / 1-4期

关键词：

D O I：

10.1016/0921-4526(93)90221-Q

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The thermodynamical properties of AlN, GaN and InN are analysed in order to estimate the possibility of the synthesis and crystal growth of these nitrides using the high gas pressure technique. The experimental results of the synthesis and crystal growth of AlN, GaN and InN are presented.

引用

页码：99 / 102

页数：4

共 9 条

[1]

GRZEGORY I, IN PRESS

[2]

GRZEGORY I, 1991, HIGH PRESSURE RES, V7, P284

[3] Thermodynamic Properties of Nitrogen Including Liquid and Vapor Phases from 63 K to 2000 K with Pressures to 10,000 Bar [J].