CRYSTAL-GROWTH OF III-N COMPOUNDS UNDER HIGH-NITROGEN PRESSURE

被引：45
作者：
GRZEGORY, I
JUN, J
KRUKOWSKI, S
BOCKOWSKI, M
POROWSKI, S
机构：
[1] High Pressure Research Center, Polish Academy of Sciences, Warsaw
来源：
PHYSICA B | 1993年 / 185卷 / 1-4期
关键词：
D O I：
10.1016/0921-4526(93)90221-Q
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The thermodynamical properties of AlN, GaN and InN are analysed in order to estimate the possibility of the synthesis and crystal growth of these nitrides using the high gas pressure technique. The experimental results of the synthesis and crystal growth of AlN, GaN and InN are presented.
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页码：99 / 102
页数：4
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