SEPARATION AND DETERMINATION OF THE INTERFACE AND OXIDE TRAP DENSITIES IN MOS STRUCTURES BY THE TRANSIENT CURRENT TECHNIQUE

被引:0
作者
KHOI, PH [1 ]
MINH, PN [1 ]
BINH, LTT [1 ]
DUNG, HA [1 ]
TUYEN, LTT [1 ]
机构
[1] NATL CTR SCI RES VIETNAM,INST PHYS,HANOI,VIETNAM
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1993年 / 135卷 / 02期
关键词
D O I
10.1002/pssa.2211350243
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
[No abstract available]
引用
收藏
页码:K91 / K95
页数:5
相关论文
共 10 条
[2]   ELECTRICAL-PROPERTIES OF THIN ANODIC SILICON DIOXIDE LAYERS GROWN IN PURE WATER [J].
GASPARD, F ;
HALIMAOUI, A ;
SARRABAYROUSE, G .
REVUE DE PHYSIQUE APPLIQUEE, 1987, 22 (01) :65-69
[3]   ELECTRON INJECTION AND TRAP FILLING IN INSULATING LAYERS [J].
KRAUSE, H .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 36 (02) :705-715
[4]   CHARGE INJECTION INTO SIO2-FILMS AT FIELDS BETWEEN 1-MV AND 3-MV CM-1 AFTER ELECTRICAL STRESS [J].
KRAUSE, H ;
BAR, HP .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1988, 110 (02) :537-547
[5]   TUNNELING TO TRAPS IN INSULATORS [J].
LUNDSTROM, I ;
SVENSSON, C .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (12) :5045-5047
[7]   THEORY OF NON-STEADY-STATE INTERFACIAL THERMAL CURRENTS IN MOS DEVICES, AND DIRECT DETERMINATION OF INTERFACIAL TRAP PARAMETERS [J].
SIMMONS, JG ;
TAYLOR, GW .
SOLID-STATE ELECTRONICS, 1974, 17 (02) :125-130
[8]   THEORY OF TRANSIENT EMISSION CURRENT IN MOS DEVICES AND DIRECT DETERMINATION INTERFACE TRAP PARAMETERS [J].
SIMMONS, JG ;
WEI, LS .
SOLID-STATE ELECTRONICS, 1974, 17 (02) :117-124
[9]   TRANSIENT ISOTHERMAL GENERATION AT SILICON-SILICON OXIDE INTERFACE AND DIRECT DETERMINATION OF INTERFACE TRAP DISTRIBUTION [J].
SIMMONS, JG ;
MAR, HA .
SOLID-STATE ELECTRONICS, 1976, 19 (05) :369-374
[10]  
WITCZAK SC, 1992, SOLID STATE ELECTRIN, V35, P34