PHOTOLUMINESCENCE INVESTIGATION OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR LAYERS

被引：0

作者：

TEWS, H

NEUMANN, R

ZWICKNAGL, P

SCHAPER, U

机构：

来源：

INSTITUTE OF PHYSICS CONFERENCE SERIES | 1992年 / 120期

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中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Photoluminescence spectroscopy (PL) has been applied as a fast and destruction free method to investigate highly complex AlGaAs/GaAs heterojunction bipolar transistors (HBT) layer sequences. Entire 2" and 3" HBT wafers were characterized at 77K. A large variety of parameters could be obtained, e.g. the emitter material composition and the collector doping. PL gives detailed information on the position of the emitter-base and the base-collector interfaces. Comparisons have been made between electrical measurements and PL.

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页码：341 / 346

页数：6

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