HIGH-RESOLUTION TEM OF HYDROGEN-INDUCED MICRODEFECTS IN SILICON

被引：0
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作者：
PONCE, FA
JOHNSON, NM
TRAMONTANA, JC
WALKER, J
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来源：
INSTITUTE OF PHYSICS CONFERENCE SERIES | 1987年 / 87期
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中图分类号：
O4 [物理学];
学科分类号：
0702 ;
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页码：49 / 54
页数：6
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