THE CASE OF AC STRESS IN THE HOT-CARRIER EFFECT

被引:0
|
作者
CHEN, KL
SALLER, S
SHAH, R
机构
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:424 / 426
页数:3
相关论文
共 50 条
  • [31] Effects of impact ionization and Auger recombination on hot-carrier solar cells and hot-carrier photocatalysts
    Takeda, Yasuhiko
    Sato, Shunsuke
    Morikawa, Takeshi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2023, 62 (SK)
  • [32] Hot-carrier dynamics in catalysis
    Harutyunyan, Hayk
    Suchanek, Figen
    Lemasters, Robert
    Foley, Jonathan J.
    MRS BULLETIN, 2020, 45 (01) : 32 - 36
  • [33] HOT-CARRIER INSTABILITY IN IGFETS
    ABBAS, SA
    DOCKERTY, RC
    APPLIED PHYSICS LETTERS, 1975, 27 (03) : 147 - 148
  • [34] A SIMPLE METHOD TO EVALUATE DEVICE LIFETIME DUE TO HOT-CARRIER EFFECT UNDER DYNAMIC STRESS
    HORIUCHI, T
    MIKOSHIBA, H
    NAKAMURA, K
    HAMANO, K
    IEEE ELECTRON DEVICE LETTERS, 1986, 7 (06) : 337 - 339
  • [35] On the Effect of Interface Traps on the Carrier Distribution Function During Hot-Carrier Degradation
    Tyaginov, S. E.
    Makarov, A.
    Jech, M.
    Franco, J.
    Sharma, P.
    Kaczer, B.
    Grasser, T.
    2016 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP (IIRW), 2016, : 95 - 98
  • [36] Electrothermal Effects on Hot-Carrier Reliability in SOI MOSFETs-AC Versus Circuit-Speed Random Stress
    Chen, Wenchao
    Cheng, Ran
    Wang, Da-Wei
    Song, Hao
    Wang, Xiang
    Chen, Hongsheng
    Li, Erping
    Yin, Wen-Yan
    Zhao, Yi
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016, 63 (09) : 3669 - 3676
  • [37] A SCALING CONSIDERATION ON MECHANICAL STRESS-INDUCED HOT-CARRIER EFFECTS
    HAMADA, A
    FURUSAWA, T
    SAITO, N
    TAKEDA, E
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (3B) : B593 - B596
  • [38] Degradation in InAs-AlSb HEMTs Under Hot-Carrier Stress
    DasGupta, Sandeepan
    Shen, Xiao
    Schrimpf, Ronald D.
    Reed, Robert A.
    Pantelides, Sokrates T.
    Fleetwood, Dan M.
    Bergman, J. I.
    Brar, B.
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (05) : 1499 - 1507
  • [39] Effects of hot-carrier stress on the performance of CMOS low noise amplifier
    Naseh, S
    Deen, MJ
    2004 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 2004, : 417 - 421
  • [40] ANALYSIS OF POSTSTRESS EFFECTS IN PASSIVATED MOSFETS AFTER HOT-CARRIER STRESS
    DESCHRIJVER, E
    HEREMANS, P
    BELLENS, R
    GROESENEKEN, G
    MAES, HE
    MICROELECTRONIC ENGINEERING, 1991, 15 (1-4) : 437 - 440