THE CASE OF AC STRESS IN THE HOT-CARRIER EFFECT

被引:0
|
作者
CHEN, KL
SALLER, S
SHAH, R
机构
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:424 / 426
页数:3
相关论文
共 50 条
  • [1] CASE OF AC STRESS IN THE HOT-CARRIER EFFECT.
    Chen, Kueing-Long
    Saller, Steve
    Shah, Rajiv
    IEEE Transactions on Electron Devices, 1986, ED-33 (03) : 424 - 426
  • [2] HOT-CARRIER EFFECT TRANSISTOR
    不详
    WIRELESS WORLD, 1969, 75 (1402): : 183 - &
  • [3] THE ROLE OF ELECTRON TRAP CREATION IN ENHANCED HOT-CARRIER DEGRADATION DURING AC STRESS
    MISTRY, K
    DOYLE, B
    IEEE ELECTRON DEVICE LETTERS, 1990, 11 (06) : 267 - 269
  • [4] HYDRODYNAMIC ANALYSIS OF DC AND AC HOT-CARRIER TRANSPORT IN SEMICONDUCTORS
    GRUZHINSKIS, V
    STARIKOV, E
    SHIKTOROV, P
    REGGIANI, L
    SARANITI, M
    VARANI, L
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (07) : 1283 - 1290
  • [5] HOT-CARRIER MAGNETORESISTANCE
    NAG, BR
    PARIA, H
    PHYSICAL REVIEW, 1966, 150 (02): : 632 - &
  • [6] On measurements of hot-carrier effect in MOSFET's
    Xi'an Dianzi Keji Daxue Xuebao/Journal of Xidian University, 24 (04): : 509 - 514
  • [7] Deuterium isotope effect for AC and DC hot-carrier degradation of MOS transistors: A comparison study
    Chen, Z
    Cheng, KG
    Lee, JJ
    Lyding, JW
    Hess, K
    Chetlur, S
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (04) : 813 - 815
  • [8] A MODEL FOR AC HOT-CARRIER DEGRADATION IN N-CHANNEL MOSFETS
    MISTRY, K
    DOYLE, B
    IEEE ELECTRON DEVICE LETTERS, 1991, 12 (09) : 492 - 494
  • [9] Examination of hot-carrier stress induced degradation on fin field-effect transistor
    Yang, Yi-Lin
    Zhang, Wenqi
    Yen, Tzu-Sung
    Hong, Jia-Jian
    Wong, Jie-Chen
    Ku, Chao-Chen
    Wu, Tai-Hsuan
    Wang, Tzuo-Li
    Li, Chien-Yi
    Wu, Bing-Tze
    Lin, Shih-Hung
    Yeh, Wen-Kuan
    APPLIED PHYSICS LETTERS, 2014, 104 (08)
  • [10] Monitoring hot-carrier degradation in SOI MOSFET's by hot-carrier luminescence techniques
    Selmi, L
    Pavesi, M
    Wong, HSP
    Acovic, A
    Sangiorgi, E
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (05) : 1135 - 1139