VERY HIGH-QUALITY SINGLE AND MULTIPLE GAAS QUANTUM-WELLS GROWN BY CHEMICAL BEAM EPITAXY

被引：23

作者：

TSANG, WT ^{[1
]}

MILLER, RC ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 19期

关键词：

D O I：

10.1063/1.97006

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1288 / 1290

页数：3

共 17 条

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[8] LUMINESCENCE STUDIES OF OPTICALLY PUMPED QUANTUM WELLS IN GAAS-ALXGA1-XAS MULTILAYER STRUCTURES [J].

MILLER, RC ;

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NORDLAND, WA ;

GOSSARD, AC .

PHYSICAL REVIEW B, 1980, 22 (02) :863-871

[9] AL-GA DISORDER IN ALXGA1-XAS ALLOYS GROWN BY MOLECULAR-BEAM EPITAXY [J].

MILLER, RC ;

TSANG, WT .

APPLIED PHYSICS LETTERS, 1981, 39 (04) :334-335

[10] EXCITONS IN GAAS QUANTUM WELLS [J].

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