DAMAGE PROPERTIES OF ZNGEP2 AT 2-MU-M

被引：41

作者：

PETERSON, RD ^{[1
]}

SCHEPLER, KL ^{[1
]}

BROWN, JL ^{[1
]}

SCHUNEMANN, PG ^{[1
]}

机构：

[1] LOCKHEED SANDERS,NASHUA,NH 03061

来源：

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS | 1995年 / 12卷 / 11期

关键词：

D O I：

10.1364/JOSAB.12.002142

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Damage thresholds at 2 mu m exceeding 10 J/cm(2) were measured in ZnGeP2 witness samples representing a range of growth runs and surface treatments. Samples grown more recently were more robust, but clear correlations between damage properties and surface quality, coating type, or incident polarization were not observed. Variation in damage threshold both within individual samples and between samples was quite large. Comparison with uncoated diffusion-bonded and single-wafer GaAs shows that uncoated ZnGeP2 damages at slightly lower energy density than does GaAs (approximately 4 J/cm(2) versus 5.5 J/cm(2), respectively). (C) 1995 Optical Society of America

引用

页码：2142 / 2146

页数：5

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