TIME-RESOLVED PHOTOLUMINESCENCE OF UNDOPED INP

被引:10
作者
KEYES, BM
DUNLAVY, DJ
AHRENKIEL, RK
SHAW, G
SUMMERS, GP
TZAFARAS, N
LENTZ, C
机构
[1] USN,RES LAB,WASHINGTON,DC 20375
[2] AT&T MICROELECTR LAB,READING,PA 19612
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.355962
中图分类号
O59 [应用物理学];
学科分类号
摘要
Energy and time-resolved photoluminescence data have been obtained for nominally undoped (n 4.5 X 10(15) cm-3) bulk InP grown by the vertical-gradient freeze method. The data were taken as a function of temperature, from 80 to 290 K, and analyzed using a solution to the continuity equation. The resulting lifetime values range from 300 ns to 3.2 mus, and surface recombination velocities were fund to be on the order of 10(3) cm/s. The temperature dependence can be explained by assuming a radiatively limited recombination with a resulting B coefficient greater-than-or-equal-to 5.9 X 10(-11) cm3/s at 300 K.
引用
收藏
页码:4249 / 4251
页数:3
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