TIME-RESOLVED PHOTOLUMINESCENCE OF UNDOPED INP

被引：10
作者：
KEYES, BM
DUNLAVY, DJ
AHRENKIEL, RK
SHAW, G
SUMMERS, GP
TZAFARAS, N
LENTZ, C
机构：
[1] USN,RES LAB,WASHINGTON,DC 20375
[2] AT&T MICROELECTR LAB,READING,PA 19612
来源：
JOURNAL OF APPLIED PHYSICS | 1994年 / 75卷 / 08期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1063/1.355962
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Energy and time-resolved photoluminescence data have been obtained for nominally undoped (n 4.5 X 10(15) cm-3) bulk InP grown by the vertical-gradient freeze method. The data were taken as a function of temperature, from 80 to 290 K, and analyzed using a solution to the continuity equation. The resulting lifetime values range from 300 ns to 3.2 mus, and surface recombination velocities were fund to be on the order of 10(3) cm/s. The temperature dependence can be explained by assuming a radiatively limited recombination with a resulting B coefficient greater-than-or-equal-to 5.9 X 10(-11) cm3/s at 300 K.
引用
收藏
页码：4249 / 4251
页数：3
相关论文
共 50 条
[21]   Time-resolved Spectroscopy of the violet luminescence of undoped AlN [J].
Freitag, R ;
Thonke, K ;
Sauer, R ;
Ebling, DG ;
Steinke, L .
MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 2005, 10 (03)
[22]   Dopant distribution in selectively regrown InP:Fe and InGaP:Fe studied by time-resolved photoluminescence [J].
Gaarder, A ;
Barrios, CA ;
Messmer, ER ;
Lourdudoss, S ;
Marcinkevicius, S .
2000 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2000, :518-521
[23]   Study of the photoexcited carrier dynamics in InP:Fe using time-resolved reflection and photoluminescence spectra [J].
Huang, SH ;
Li, X ;
Lu, F .
APPLIED SURFACE SCIENCE, 2004, 230 (1-4) :158-162
[24]   Time-resolved photoluminescence spectroscopy of InAs quantum dots on InP with various InAlGaAs barrier thicknesses [J].
Yoon, JJ ;
Jung, SI ;
Park, HJ ;
Suh, HK ;
Jeon, MH ;
Leem, JY ;
Cho, ET ;
Lee, JI ;
Cho, HK ;
Mo, YG ;
Kim, JS ;
Son, JS ;
Hang, IK .
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2005, 26 (1-4) :207-211
[25]   Time-Resolved Spectroscopy of Epitaxial InP Nanowires [J].
Crankshaw, S. ;
Reitzenstein, S. ;
Chuang, L. ;
Moewe, M. ;
Muench, S. ;
Hofman, C. ;
Lam, M. ;
Forchel, A. ;
Chang-Hasnain, C. .
2007 CONFERENCE ON LASERS & ELECTRO-OPTICS/QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2007), VOLS 1-5, 2007, :1445-+
[26]   Time-resolved luminescence of porous Si and InP [J].
Chernoutsan, K ;
Dneprovskii, V ;
Shaligina, O ;
Zhukov, E .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2000, 182 (01) :347-352
[27]   Time-resolved luminescence of porous Si and InP [J].
Chernoutsan, K. ;
Dneprovskii, V. ;
Shaligina, O. ;
Zhukov, E. .
Physica Status Solidi (A) Applied Research, 2000, 182 (01) :347-352
[28]   Time-resolved photoluminescence spectra of InGaN epilayer [J].
Li, Wei ;
Wang, Wei Ying .
YOUNG SCIENTISTS FORUM 2017, 2018, 10710
[29]   Time-resolved photoluminescence study of Si: Ag [J].
Vinh, NQ ;
Klik, M ;
Gregorkiewicz, T .
PHYSICA B-CONDENSED MATTER, 2001, 308 :414-417
[30]   Time-resolved cathodoluminescence and photoluminescence of nanoscale oxides [J].
Grigorjeva, L. ;
Millers, D. ;
Kalinko, A. ;
Pankratov, V. ;
Smits, K. .
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2009, 29 (02) :255-259
12345