ON THE PRESSURE EFFECT ON TC OF HOLE-DOPED AND ELECTRON-DOPED HIGH-TC SUPERCONDUCTORS

被引：11

作者：

ELESIN, VF

KASHURNIKOV, VA

OPENOV, LA

PODLIVAEV, AI

机构：

[1] Department of Physics and Technical Application of Superconductivity, Moscow Engineering Physics Institute, Moscow, 115409

来源：

PHYSICA C | 1992年 / 195卷 / 1-2期

关键词：

D O I：

10.1016/0921-4534(92)90087-S

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The binding energies of excess carriers (holes or electrons) as functions of the in-plane copper-oxygen hopping matrix element are calculated numerically by an exact diagonalization of the EmerY Hamiltonian for the two-dimensional Cu4O8 cluster. Based on the results of the calculations, a qualitative explanation is given for experimental findings concerning the pressure dependence of T(c) in hole-doped and electron-doped high-T(c) superconductors. The possibility of Positive dT(c)/dP in electron-doped high-T(c) superconductors is predicted.

引用

页码：171 / 176

页数：6

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