ELECTRICAL-PROPERTIES OF DISLOCATIONS AND POINT-DEFECTS IN PLASTICALLY DEFORMED SILICON

被引：290
作者：
OMLING, P
WEBER, ER
MONTELIUS, L
ALEXANDER, H
MICHEL, J
机构：
[1] UNIV CALIF BERKELEY,DEPT MAT SCI,BERKELEY,CA 94720
[2] UNIV LUND,DEPT SOLID STATE PHYS,S-22100 LUND,SWEDEN
[3] UNIV COLOGNE,INST PHYS 2,MET PHYS ABT,D-5000 COLOGNE,FED REP GER
来源：
PHYSICAL REVIEW B | 1985年 / 32卷 / 10期
关键词：
D O I：
10.1103/PhysRevB.32.6571
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：6571 / 6581
页数：11
相关论文
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