INTERNAL PHOTOEMISSION IN GAAS/(ALXGA1-X)AS HETEROSTRUCTURES

被引：22

作者：

ABSTREITER, G ^{[1
]}

PRECHTEL, U ^{[1
]}

WEIMANN, G ^{[1
]}

SCHLAPP, W ^{[1
]}

机构：

[1] FERNMELDETECH ZENTALAMT,D-6100 DARMSTADT,FED REP GER

来源：

PHYSICA B & C | 1985年 / 134卷 / 1-3期

关键词：

D O I：

10.1016/0378-4363(85)90384-5

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：433 / 438

页数：6

共 14 条

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[7] EMPIRICAL RULE TO PREDICT HETEROJUNCTION BAND DISCONTINUITIES [J].

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[8] BARRIER CONTROL AND MEASUREMENTS - ABRUPT SEMICONDUCTOR HETEROJUNCTIONS [J].

KROEMER, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03) :433-439

[9] HETEROSTRUCTURE DEVICES - A DEVICE PHYSICIST LOOKS AT INTERFACES [J].

KROEMER, H .

SURFACE SCIENCE, 1983, 132 (1-3) :543-576

[10]

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