CHARGING EFFECTS OF A SINGLE QUANTUM LEVEL IN A BOX

被引：100

作者：

GROSHEV, A

IVANOV, T

VALTCHINOV, V

机构：

[1] Theoretical Physics Division, University of Sofia, 1126 Sofia

来源：

PHYSICAL REVIEW LETTERS | 1991年 / 66卷 / 08期

关键词：

D O I：

10.1103/PhysRevLett.66.1082

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Resonant tunneling through a quantum-box level is investigated in terms of nonequilibrium Green's functions. A Hamiltonian with a Hubbard-type term, accounting for charging effects in the box, is proposed. Besides the resonance-level feature in the current-voltage characteristic, a satellite feature appears due to charging effects. A tuning between the two features is found by varying the tunneling rates through the emitter and the collector barriers; this provides a method for distinguishing charging effects from lateral-confinement effects.

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页码：1082 / 1085

页数：4

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