RAPID THERMAL-PROCESSING OF THIN GATE DIELECTRICS - OXIDATION OF SILICON

被引：106

作者：

NULMAN, J

KRUSIUS, JP

GAT, A

机构：

[1] CORNELL UNIV,NATL RES & RESOURCE FACIL SUBMICRON STRUCT,ITHACA,NY 14853

[2] AG ASSOCIATES,PALO ALTO,CA 94303

来源：

IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 05期

关键词：

D O I：

10.1109/EDL.1985.26099

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：205 / 207

页数：3

共 9 条

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[2]

HATTORI T, 1982, SOLID STATE TECH JUL, P83

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[4] EFFECT OF HCL AND CL2 ON THERMAL OXIDATION OF SILICON [J].

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[5]

MONKOWSKI J, 1979, SOLID STATE TECH JUL

[6] HYDROGEN CHLORIDE AND CHLORINE GETTERING - EFFECTIVE TECHNIQUE FOR IMPROVING PERFORMANCE OF SILICON DEVICES [J].

RONEN, RS ;

ROBINSON, PH .

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[7]

Sze S.M., 1981, PHYSICS SEMICONDUCTO, P397

[8]

HEATPULSE 210 T RAPI

[9]

4145 DEVICE PARAMETE

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