BIPOLAR-TRANSISTOR WITH GRADED BAND-GAP BASE

被引：55

作者：

HAYES, JR ^{[1
]}

CAPASSO, F ^{[1
]}

GOSSARD, AC ^{[1
]}

MALIK, RJ ^{[1
]}

WIEGMANN, W ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

ELECTRONICS LETTERS | 1983年 / 19卷 / 11期

关键词：

D O I：

10.1049/el:19830281

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：410 / 411

页数：2

共 9 条

[1] DIFFUSED EPITAXIAL GAALAS-GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR FOR HIGH-FREQUENCY OPERATION [J].

ANKRI, D ;

SCAVENNEC, A ;

BESOMBES, C ;

COURBET, C ;

HELIOT, F ;

RIOU, J .

APPLIED PHYSICS LETTERS, 1982, 40 (09) :816-818

[2]

ASBECK PM, 1982, IEEE ELECTRON DEVICE, V3, P366

[3]

BENEKING H, 1981, ELECTRON LETT, V18, P25

[4] NEW GRADED BAND-GAP PICOSECOND PHOTO-TRANSISTOR [J].

CAPASSO, F ;

TSANG, WT ;

BETHEA, CG ;

HUTCHINSON, AL ;

LEVINE, BF .

APPLIED PHYSICS LETTERS, 1983, 42 (01) :93-95

[5] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J].

KROEMER, H .

PROCEEDINGS OF THE IEEE, 1982, 70 (01) :13-25

[6]

Kroemer H., 1957, RCA REV, V18, P332

[7] ELECTRON-DRIFT VELOCITY-MEASUREMENT IN COMPOSITIONALLY GRADED ALXGA1-XAS BY TIME-RESOLVED OPTICAL PICOSECOND REFLECTIVITY [J].

LEVINE, BF ;

TSANG, WT ;

BETHEA, CG ;

CAPASSO, F .

APPLIED PHYSICS LETTERS, 1982, 41 (05) :470-472

[8]

LEVINE BF, 1983, APPL PHYS LETT, V43

[9]

LOGAN RA, 1973, J ELECTRO CHEM SOC, V10, P1385

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