Correlative assessment of structural and photoelectrical properties of thermally evaporated CdSe thin films

被引：0

作者：

Sarmah, K. ^{[1
]}

Sarma, R. ^{[1
]}

Das, H. L. ^{[1
]}

机构：

[1] Gauhati Univ, Dept Phys, Gauhati 781014, India

来源：

JOURNAL OF NON-OXIDE GLASSES | 2009年 / 1卷 / 02期

关键词：

CdSe thin film; Lattice constant; Grain size; Microstrain; Dislocation density;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Cadmium Selenide thin films of different thicknesses, (1530-2230 angstrom) deposited by thermal evaporation on suitably cleaned glass substrates at different substrate temperatures (473-623K) are of polycrystalline nature having hexagonal structure. In gap type cell configuration of these films with thermally evaporated aluminium electrodes, the I-V characteristics are observed to be linear both under dark and monochromatic illuminations for low bias voltages, but show Poole-Frenkel type of conductivity for high bias voltages under the same illuminations. The values of lattice constant, grain size, microstrain and dislocation density of the deposited films are calculated and these are co-related with different photoelectrical parameters.

引用

页码：143 / 156

页数：14

共 16 条

[1] Optical properties of CdSe films deposited by the quasi-closed volume technique [J].