Asymptotic behavior of the drift-diffusion semiconductor equations

被引：19

作者：

Fang, WF ^{[1
]}

Ito, K ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT MATH,RALEIGH,NC 27695

来源：

JOURNAL OF DIFFERENTIAL EQUATIONS | 1995年 / 123卷 / 02期

关键词：

D O I：

10.1006/jdeq.1995.1173

中图分类号：

O1 [数学];

学科分类号：

0701 ; 070101 ;

摘要：

In this paper, we continue our study on the asymptotic behavior of the drift-diffusion model for semiconductor devices. We assume the mobilities are constants, and show in this case the dynamical system has a compact, connected, maximal attractor that attracts sets that are bounded in terms of the L(infinity) norm. We then prove the differentiability of the semigroup defined by the solution map, and give an upper bound for the Hausdorff dimension of the attractor. (C) 1995 Academic Press, Inc

引用

页码：567 / 587

页数：21

共 15 条

[1]

Babin AV., 1992, ATTRACTORS EVOLUTION

[2]

COURANT R, 1953, METHODS MATH PHYSICS

[3]

FANG W, IN PRESS APPL MATH O

[4] Global solutions of the time-dependent drift-diffusion semiconductor equations [J].