CHARACTERISTICS OF CR-SIO2-NSI TUNNEL-DIODES

被引：63
作者：
KUMAR, V [1 ]
DAHLKE, WE [1 ]
机构：
[1] LEHIGH UNIV, DEPT ELECT ENGN, BETHLEHEM, PA 18015 USA
来源：
SOLID-STATE ELECTRONICS | 1977年 / 20卷 / 02期
关键词：
D O I：
10.1016/0038-1101(77)90064-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：143 / 152
页数：10
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