THE INJECTION SYMMETRY IN HIGH-DOPED SEMICONDUCTOR P+N JUNCTIONS

被引：0
|
作者：
UNGER, K
BREITENSTEIN, O
机构：
来源：
ACTA PHYSICA ACADEMIAE SCIENTIARUM HUNGARICAE | 1981年 / 51卷 / 04期
关键词：
D O I：
10.1007/BF03159680
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：429 / 435
页数：7
相关论文
共 50 条
  • [1] INJECTION INSTABILITY IN SEMICONDUCTOR STRUCTURES WITH P-N-JUNCTIONS
    IDLIS, BG
    KNAB, OD
    FROLOV, VD
    DOKLADY AKADEMII NAUK SSSR, 1989, 308 (03): : 601 - 605
  • [2] QUENCHED-IN CENTERS IN SILICON P+N JUNCTIONS
    YAU, LD
    SAH, CT
    SOLID-STATE ELECTRONICS, 1974, 17 (02) : 193 - 201
  • [3] Evaluation of Al-doped SPE ultrashallow P+N junctions for use as PNPSiGeHBT emitters
    Civale, Yann
    Lorito, Gianpaolo
    Xu, Cuiqin
    Nanver, Lis K.
    van der Toorn, Ramses
    EXTENDED ABSTRACTS 2008 INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY, 2008, : 97 - 100
  • [4] THEORY OF ACOUSTIC INJECTION IN PIEZOELECTRIC SEMICONDUCTOR P-N-JUNCTIONS
    BUGAEVA, TV
    GULYAEV, YV
    FUKS, BI
    CHUSOV, II
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (07): : 812 - 816
  • [5] Effect of shallow donors induced by hydrogen on P+N junctions
    Godey, S.
    Ntsoenzok, E.
    Schmidt, D.C.
    Barbot, J.F.
    Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 58 (01): : 108 - 112
  • [6] DEPLETION-LAYER CAPACITANCE OF P+N STEP JUNCTIONS
    GUMMEL, HK
    SCHARFET.DL
    JOURNAL OF APPLIED PHYSICS, 1967, 38 (05) : 2148 - &
  • [7] Effect of shallow donors induced by hydrogen on P+N junctions
    Godey, S
    Ntsoenzok, E
    Schmidt, DC
    Barbot, JF
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 58 (1-2): : 108 - 112
  • [8] DLTS MEASUREMENT ON AU-DOPED SI P+N JUNCTIONS AND ITS COMPUTER-SIMULATION
    TOKUMARU, Y
    OKUSHI, H
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (12) : 2441 - 2449
  • [9] Electrical characterization and modelling of high energy pre-amorphized P+N silicon junctions
    Abdelaoui, M
    Idrissi-Benzohra, M
    Lamine, M
    Benzohra, M
    MICROELECTRONICS JOURNAL, 2003, 34 (10) : 955 - 959
  • [10] FREQUENCY DEPENDENCE OF REVERSE-BIASED CAPACITANCE OF GOLD-DOPED SILICON P+N STEP JUNCTIONS
    SAH, CT
    REDDI, VGK
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (07) : 345 - +
12345