GIGABIT TRANSMITTER ARRAY MODULES ON SILICON WAFERBOARD

被引:32
作者
ARMIENTO, CA
NEGRI, AJ
TABASKY, MJ
BOUDREAU, RA
ROTHMAN, MA
FITZGERALD, TW
HAUGSJAA, PO
机构
[1] GTE Laboratories, Waltham
来源
IEEE TRANSACTIONS ON COMPONENTS HYBRIDS AND MANUFACTURING TECHNOLOGY | 1992年 / 15卷 / 06期
关键词
D O I
10.1109/33.206933
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Individually addressable, four-channel transmitter arrays operating at data rates of 1 Gb/s have been developed based on a hybrid optoelectronic integration approach called silicon waferboard. This approach, which uses micromachined silicon as a platform for integration of electronic, optoelectronic, and optical components, is expected to be essential to the development of optical multichip modules (OMCM's). A key feature of silicon waferboard is the use of mechanical alignment features fabricated on the surface of a silicon chip that enable passive optical alignment of components such as lasers and optical fibers. The transmitter array, which operates at a wavelength of 1.3 mum, comprises a four-channel InGaAsP/InP laser array that is passively aligned to four single-mode fibers held in V-grooves. The transmitter array also includes a four-channel GaAs MESFET driver array chip that provides high-speed drive currents to the individual lasers. The laser array, driver array, and optical fibers are all spaced on 350-mum centers, which results in a four-channel transmitter array that fits within a width of only 2 mm. Transmitter array waferboards were housed in a specially developed package to permit high frequency characterization. These transmitter array modules have demonstrated operation at data rates of 1 Gb/s per channel, with an interchannel crosstalk of -29 dB.
引用
收藏
页码:1072 / 1080
页数:9
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