A NEW ANALYTICAL MODEL FOR HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS

被引：8

作者：

GRINBERG, AA

SHUR, M

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 05期

关键词：

D O I：

10.1063/1.342859

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2116 / 2120

页数：5

共 9 条

[1] CURRENT VOLTAGE AND CAPACITANCE VOLTAGE CHARACTERISTICS OF HETEROSTRUCTURE INSULATED-GATE FIELD-EFFECT TRANSISTORS [J].

BAEK, J ;

SHUR, MS ;

DANIELS, RR ;

ARCH, DK ;

ABROKWAH, JK ;

TUFTE, ON .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (08) :1650-1657

[2] CHARGE-SHEET MODEL OF MOSFET [J].

BREWS, JR .

SOLID-STATE ELECTRONICS, 1978, 21 (02) :345-355

[3] MODEL FOR MODULATION DOPED FIELD-EFFECT TRANSISTOR [J].

DRUMMOND, TJ ;

MORKOC, H ;

LEE, K ;

SHUR, M .

ELECTRON DEVICE LETTERS, 1982, 3 (11) :338-341

[4] NEGATIVE FIELD-EFFECT MOBILITY ON (100) SI SURFACES [J].

FANG, FF ;

HOWARD, WE .

PHYSICAL REVIEW LETTERS, 1966, 16 (18) :797-&

[5] THE EFFECT OF THE TWO-DIMENSIONAL GAS DEGENERACY ON THE IV CHARACTERISTICS OF THE MODULATION-DOPED FIELD-EFFECT TRANSISTOR [J].

GRINBERG, AA .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (03) :1097-1103

[6] SPACE-CHARGE-LIMITED CURRENT AND CAPACITANCE IN DOUBLE-JUNCTION DIODES [J].

GRINBERG, AA ;

LURYI, S .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (03) :1181-1189

[7] EFFECTS OF DIFFUSION CURRENT ON CHARACTERISTICS OF METAL-OXIDE (INSULATOR)-SEMICONDUCTOR TRANSISTORS [J].

PAO, HC ;

SAH, CT .

SOLID-STATE ELECTRONICS, 1966, 9 (10) :927-+

[8]

RUDEN PP, IN PRESS IEEE T ELEC

[9]

SZE SM, 1981, PHYSICS SEMICONDUCTO

← 1 →