THE EFFECT OF WORK FUNCTION CHANGE ON THE SPUTTERING OF SI+ FROM OXIDIZED SI SURFACES

被引：17
作者：
YU, ML
机构：
来源：
PHYSICA SCRIPTA | 1983年 / T6卷
关键词：
D O I：
10.1088/0031-8949/1983/T6/010
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
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页码：67 / 70
页数：4
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共 24 条
  • [1] COMPARATIVE STUDY OF SI(111), SILICON-OXIDE, SIC AND SI3N4 SURFACES BY SECONDARY ION MASS-SPECTROSCOPY (SIMS)
    BENNINGHOVEN, A
    SICHTERMANN, W
    STORP, S
    [J]. THIN SOLID FILMS, 1975, 28 (01) : 59 - 64
  • [2] BERNHEIM M, 1981, J MICROSC SPECT ELEC, V6, P141
  • [3] SIMILARITIES IN PHOTON AND ION EMISSIONS INDUCED BY SPUTTERING
    BLAISE, G
    [J]. SURFACE SCIENCE, 1976, 60 (01) : 65 - 75
  • [4] DEPLAT JL, 1980, SURF SCI, V92, P97
  • [5] SIO2 ULTRA THIN-FILM GROWTH-KINETICS AS INVESTIGATED BY SURFACE TECHNIQUES
    DERRIEN, J
    COMMANDRE, M
    [J]. SURFACE SCIENCE, 1982, 118 (1-2) : 32 - 46
  • [6] CONTACT-POTENTIAL MEASUREMENTS OF ADSORPTION OF CS O2 AND H2 ON (110) TA
    FEHRS, DL
    STICKNEY, RE
    [J]. SURFACE SCIENCE, 1967, 8 (03) : 267 - &
  • [7] ELECTRON-SPECTROSCOPIC STUDIES OF THE EARLY STAGES OF THE OXIDATION OF SI
    GARNER, CM
    LINDAU, I
    SU, CY
    PIANETTA, P
    SPICER, WE
    [J]. PHYSICAL REVIEW B, 1979, 19 (08): : 3944 - 3956
  • [8] ELECTRON ORBITAL ENERGIES OF OXYGEN ADSORBED ON SILICON SURFACES AND OF SILICON DIOXIDE
    IBACH, H
    ROWE, JE
    [J]. PHYSICAL REVIEW B, 1974, 10 (02): : 710 - 718
  • [9] IONIZATION PROBABILITY OF SPUTTERED ATOMS
    LANG, ND
    [J]. PHYSICAL REVIEW B, 1983, 27 (04): : 2019 - 2029
  • [10] DEEXCITATION PROCESSES NEAR-SURFACE OF ION BOMBARDED SIO2 AND SI
    MARTIN, PJ
    BAYLY, AR
    MACDONALD, RJ
    TOLK, NH
    CLARK, GJ
    KELLY, JC
    [J]. SURFACE SCIENCE, 1976, 60 (02) : 349 - 364
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