A surface-potential-based model for AlGaN/AlN/GaN HEMT

被引：13
|
作者：
Wang Jie [1 ,2 ]
Sun Lingling [2 ]
Liu Jun [2 ]
Zhou Mingzhu [2 ]
机构：
[1] Zhejiang Univ, Dept Elect Engn, Hangzhou 310027, Zhejiang, Peoples R China
[2] Hangzhou Dianzi Univ, Key Lab RF Circuits & Syst, Minist Educ, Hangzhou 310018, Zhejiang, Peoples R China
来源：
JOURNAL OF SEMICONDUCTORS | 2013年 / 34卷 / 09期
基金：
美国国家科学基金会;
关键词：
AlGaN/AlN/GaN HEMT; 2DEG; surface potential; polarization effects; mobility;
D O I：
10.1088/1674-4926/34/9/094002
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A new surface-potential-based model for AlGaN/AlN/GaN high electron mobility transistor (HEMT) is proposed in this paper. Since the high polarization effects caused by AlN interlayer favorably influence the two dimensional electron gas (2DEG) and scattering mechanisms, we first add spontaneous and piezoelectric charge terms to the source equation of surface-potential, and a mobility model for AlGaN/AlN/GaN HEMT is rewritten. Compared with TCAD simulations, the DC characteristics of AlGaN/AlN/GaN HEMT are faithfully reproduced by the new model.
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收藏
页数：4
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