ANALYSIS OF ARSENIC AND PHOSPHORUS ION-IMPLANTED SILICON BY SPECTROSCOPIC ELLIPSOMETRY

被引：9
|
作者：
CORTOT, JP [1 ]
GED, P [1 ]
机构：
[1] CTR NATL ETUDES TELECOMMUN,CTR NORBERT SEGARD,F-38420 MEYLAN,FRANCE
来源：
APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 01期
关键词：
D O I：
10.1063/1.93301
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：93 / 95
页数：3
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