ANALYSIS OF ARSENIC AND PHOSPHORUS ION-IMPLANTED SILICON BY SPECTROSCOPIC ELLIPSOMETRY

被引：9

作者：

CORTOT, JP ^{[1
]}

GED, P ^{[1
]}

机构：

[1] CTR NATL ETUDES TELECOMMUN,CTR NORBERT SEGARD,F-38420 MEYLAN,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 01期

关键词：

D O I：

10.1063/1.93301

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：93 / 95

页数：3

共 13 条

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[10] CHARACTERIZATION OF (P-31)+-IMPLANTED SI LAYERS BY ELLIPSOMETRY [J].

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