DEFECT TRAPPING OF ION-IMPLANTED DEUTERIUM IN NICKEL

被引：111

作者：

BESENBACHER, F ^{[1
]}

BOTTIGER, J ^{[1
]}

MYERS, SM ^{[1
]}

机构：

[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 05期

关键词：

D O I：

10.1063/1.331132

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3536 / 3546

页数：11

共 54 条

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[9] HYDROGEN TRAPPING IN ION-IMPLANTED NICKEL [J].

BESENBACHER, F ;

BOTTIGER, J ;

LAURSEN, T ;

MOLLER, W .

JOURNAL OF NUCLEAR MATERIALS, 1980, 93-4 (OCT) :617-621

[10] DEUTERIUM TRAPPING IN HELIUM-IMPLANTED NICKEL [J].

BESENBACHER, F ;

BOTTIGER, J ;

MYERS, SM .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (05) :3547-3551

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