AN EPITAXIAL SI/INSULATOR/SI STRUCTURE PREPARED BY VACUUM DEPOSITION OF CAF2 AND SILICON

被引：53
作者：
ASANO, T
ISHIWARA, H
机构：
来源：
THIN SOLID FILMS | 1982年 / 93卷 / 1-2期
关键词：
D O I：
10.1016/0040-6090(82)90099-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：143 / 150
页数：8
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