AC CONDUCTIVITY IN POROUS SILICON

被引：36

作者：

BENCHORIN, M

MOLLER, F

KOCH, F

机构：

[1] Technische Universität München, Physik-Department E16

来源：

JOURNAL OF LUMINESCENCE | 1993年 / 57卷 / 1-6期

关键词：

D O I：

10.1016/0022-2313(93)90125-7

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We have measured the frequency dependence of the conductivity of various samples of porous silicon in the regime 10 Hz-100 kHz at different temperatures. The conductivity sigma(omega), increases with frequency, a behaviour typical to disordered solids. All different temperature series merge into a universal curve, for which sigma(omega) = omega(s) with s = 0.95 +/- 0.05. The conductivity in this regime is only weakly temperature dependent, which suggests that the density of state at the Fermi level is finite. We discuss this behaviour in the light of the structural and electronic properties of porous silicon.

引用

页码：159 / 162

页数：4

共 13 条

[1]

ANDERSON RC, 1991, J ELECTROCHEM SOC, V138, P3450

[2] AN EXPERIMENTAL AND THEORETICAL-STUDY OF THE FORMATION AND MICROSTRUCTURE OF POROUS SILICON [J].