DEPOSITION AND CHARACTERIZATION OF FULLERENE FILMS

被引：321

作者：

HEBARD, AF

HADDON, RC

FLEMING, RM

KORTAN, AR

机构：

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 17期

关键词：

D O I：

10.1063/1.106095

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thermal sublimation of pure C60 and C70 has been used for depositing well-characterized fullerene films on a variety of substrates. Film purity is determined by infrared absorption spectra and the extent of crystallinity of the face-centered cubic structure by x rays. Thickness-dependent optical and electrical measurements reveal uniform films over the thickness range 200-1000 angstrom. We obtain optical absorption coefficients having values between those of Si and Ge and a relative permittivity having a value close to that of amorphous SiO2.

引用

页码：2109 / 2111

页数：3

共 14 条

[1]

FLEMING RM, 1991, MATER RES SOC SYMP P, V206, P691

[2]

HADDON RC, 1991, NATURE, V350, P310

[3] INTERFACE CONTRIBUTION TO THE CAPACITANCE OF THIN-FILM AL-AL2O3-AL TRILAYER STRUCTURES [J].