EXTENDED DEFECTS IN SILICON SINGLE-CRYSTALS

被引:0
|
作者
TIKHONOV, LV
KHARKOVA, GV
GOLUB, TV
机构
来源
FIZIKA TVERDOGO TELA | 1986年 / 28卷 / 04期
关键词
D O I
暂无
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:1193 / 1194
页数:2
相关论文
共 50 条
  • [21] MICROSTRESS DISTRIBUTIONS IN SINGLE-CRYSTALS OF SILICON
    PROVAN, JW
    GHONEM, H
    CANADIAN METALLURGICAL QUARTERLY, 1976, 15 (04) : 319 - 324
  • [22] DYNAMICAL YIELDING OF SILICON SINGLE-CRYSTALS
    BUCHAR, J
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1973, 19 (02): : 661 - 670
  • [23] ON DEFORMATION TWINS IN SILICON SINGLE-CRYSTALS
    YASUTAKE, K
    STEPHENSON, JD
    UMENO, M
    KAWABE, H
    PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1986, 53 (03): : L41 - L47
  • [24] CREEP AND RECOVERY OF SILICON SINGLE-CRYSTALS
    TAYLOR, TA
    BARRETT, CR
    MATERIALS SCIENCE AND ENGINEERING, 1972, 10 (02): : 93 - &
  • [25] HORIZONTAL PULLING OF SILICON SINGLE-CRYSTALS
    KUDO, B
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 : 653 - 654
  • [26] SILICON DOPING OF GAAS SINGLE-CRYSTALS
    MORAVEC, F
    STEPANEK, B
    SESTAKOVA, V
    CRYSTAL RESEARCH AND TECHNOLOGY, 1992, 27 (04) : 477 - 479
  • [27] Extended defects in GaN single crystals
    Lefeld-Sosnowska, M
    Frymark, I
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2001, 34 (10A) : A148 - A150
  • [28] POSITRON-ANNIHILATION INVESTIGATION OF DEFECTS IN SILICON SINGLE-CRYSTALS IRRADIATED WITH XENON IONS
    GIRKA, AI
    KLOPIKOV, EB
    SKURATOV, VA
    SHISHKIN, AV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (02): : 202 - 205
  • [29] EFFECT OF IMPURITIES AND INHERENT DEFECTS ON THE PHYSICOMECHANICAL PROPERTIES OF SILICON-CARBIDE SINGLE-CRYSTALS
    GARSHIN, AP
    LAVRENOVA, EA
    VODAKOV, YA
    MOKHOV, EN
    FIZIKA TVERDOGO TELA, 1992, 34 (09): : 2748 - 2752
  • [30] LATTICE DEFECTS IN ANNEALED GAAS SINGLE-CRYSTALS
    CHIANG, SY
    PEARSON, GL
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1973, 18 (12): : 1578 - 1578