PLASMA-ASSISTED ETCHING - ION-ASSISTED SURFACE-CHEMISTRY

被引：0

作者：

COBURN, JW

WINTERS, HF

机构：

来源：

关键词：

D O I：

暂无

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：98 / 105

页数：8

共 36 条

[1] SURFACE STUDIES OF AND A MASS BALANCE MODEL FOR AR+ ION-ASSISTED CL-2 ETCHING OF SI
BARKER, RA
MAYER, TM
PEARSON, WC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (01): : 37 - 42
[2] ELECTRON-SPECTROSCOPY STUDY OF SILICON SURFACES EXPOSED TO XEF2 AND THE CHEMISORPTION OF SIF4 ON SILICON
CHUANG, TJ
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) : 2614 - 2619
[3] ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING
COBURN, JW
WINTERS, HF
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3189 - 3196
[4] PLASMA-ASSISTED ETCHING IN MICROFABRICATION
COBURN, JW
WINTERS, HF
[J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1983, 13 : 91 - 116
[5] COBURN JW, 1984, APPL PIEZOELECTRIC Q, P221
[6] DIELEMAN J, 1984, SOLID STATE TECHNOL, V27, P191
[7] DONNELLY VM, 1981, SOLID STATE TECHNOL, V24, P161
[8] DESORPTION OF SOLID HYDROGEN BY ENERGETIC PROTONS, DEUTERONS, AND ELECTRONS
ERENTS, SK
MCCRACKEN, GM
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (07) : 3139 - 3145
[9] Flamm D.L., 1981, PLASMA CHEM PLASMA P, V1, P317, DOI [10.1007/bf00565992, DOI 10.1007/BF00565992]
[10] FLAMM DL, 1983, SOLID STATE TECHNOL, V26, P117