INP-SIO2 MIS STRUCTURE

被引：80

作者：

MESSICK, L ^{[1
]}

机构：

[1] USN,CTR ELECTR LAB,SAN DIEGO,CA 92152

来源：

JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 11期

关键词：

D O I：

10.1063/1.322500

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4949 / 4951

页数：3

共 12 条

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ASTLES, MG ;

WILLIAMS, EW .

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[2] INP SCHOTTKY-GATE FIELD-EFFECT TRANSISTORS [J].

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ARCHER, RJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (11) :1023-1030

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BLOM, GM ;

WOODALL, JM .

APPLIED PHYSICS LETTERS, 1970, 17 (09) :373-&

[4] HIGH-EFFICIENCY MICROWAVE GENERATION IN INP [J].

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JOYCE, BD ;

GRAY, KW .

ELECTRONICS LETTERS, 1972, 8 (01) :11-&

[5]

GOLDSMITH N, 1967, RCA REV, V28, P153

[6] 3-LEVEL OSCILLATOR - A NEW FORM OF TRANSFERRED-ELECTRON DEVICE [J].

HILSUM, C ;

REES, HD .

ELECTRONICS LETTERS, 1970, 6 (09) :277-&

[7] AN INP MIS DIODE [J].

LILE, DL ;

COLLINS, DA .

APPLIED PHYSICS LETTERS, 1976, 28 (09) :554-556

[8]

RUNYAN WR, 1975, SEMICONDUCTOR MEASUR, P173

[9] AN INVESTIGATION OF SURFACE STATES AT A SILICON SILICON OXIDE INTERFACE EMPLOYING METAL OXIDE SILICON DIODES [J].

TERMAN, LM .

SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) :285-299

[10]

Wilmsen C. W., 1975, Critical Reviews in Solid State Sciences, V5, P313, DOI 10.1080/10408437508243489

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