DYNAMICS OF DEFECT CREATION BY ION-IMPLANTATION IN THERMAL SIO2

被引：24

作者：

DEVINE, RAB

GOLANSKI, A

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 07期

关键词：

D O I：

10.1063/1.333278

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2738 / 2740

页数：3

共 19 条

[11] E' CENTER IN GLASSY SIO2 - MICROWAVE SATURATION PROPERTIES AND CONFIRMATION OF THE PRIMARY SI-29 HYPERFINE-STRUCTURE [J].

GRISCOM, DL .

PHYSICAL REVIEW B, 1979, 20 (05) :1823-1834

[12] FUNDAMENTAL DEFECT CENTERS IN GLASS - ELECTRON-SPIN RESONANCE AND OPTICAL-ABSORPTION STUDIES OF IRRADIATED PHOSPHORUS-DOPED SILICA GLASS AND OPTICAL FIBERS [J].

GRISCOM, DL ;

FRIEBELE, EJ ;

LONG, KJ ;

FLEMING, JW .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (07) :3743-3762

[13]

Hobbs L.W., 1980, J PHYSIQUE C, V41, DOI DOI 10.1051/JPHYSCOL:1980660

[14]

MACCAULAYNEWCOM.RG, UNPUB NUCL INSTRUM M

[15] DEVICE, CIRCUIT, AND TECHNOLOGY SCALING TO MICRON AND SUB-MICRON DIMENSIONS [J].

REISMAN, A .

PROCEEDINGS OF THE IEEE, 1983, 71 (05) :550-565

[16] NEW HOT-CARRIER INJECTION AND DEVICE DEGRADATION IN SUB-MICRON MOSFETS [J].

TAKEDA, E ;

NAKAGOME, Y ;

KUME, H ;

ASAI, S .

IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1983, 130 (03) :144-150

[17] ENERGY SPIKES IN SI AND GE DUE TO HEAVY-ION BOMBARDMENT [J].

THOMPSON, DA ;

WALKER, RS .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 36 (1-2) :91-100

[18]

Winterbon K.B., 1975, ION IMPLANTATION RAN, V2

[19]

WINTERBON KB, 1975, ION IMPLANTATION RAN, V1

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